Full PDF Text Transcription for IRFZ44Z (Reference)
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ce on-resistance: RDS(on) ≤13.9mΩ ·Enhancement mode ·Fast Switching Speed ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation ·DESCRITION ·reliable device for use in a wide variety of applications ·ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE VDSS Drain-Source Voltage 55 VGS Gate-Source Voltage ±20 ID Drain Current-Continuous 51 IDM Drain Current-Single Pulsed 200 PD Total Dissipation @TC=25℃ 80 Tj Max.