Download IRFZ48 Datasheet PDF
Inchange Semiconductor
IRFZ48
FEATURES - Static drain-source on-resistance: RDS(on) ≤ 35mΩ - Fast Switching Speed - 100% avalanche tested - Minimum Lot-to-Lot variations for robust device performance and reliable operation - APPLICATION - DC/DC Converter - Ideal for high-frequency switching and synchronous rectification - ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE VDSS Drain-Source Voltage Gate-Source Voltage ±20 Drain Current-Continuous Drain Current-Single Pulsed Total Dissipation @TC=25℃ Tj Max. Operating Junction Temperature Tstg Storage Temperature -55~175 UNIT V V A A W ℃ ℃ - THERMAL CHARACTERISTICS SYMBOL PARAMETER Rth(ch-c) Channel-to-case thermal resistance MAX 0.79 UNIT ℃/W IRFZ48 isc website:.iscsemi.cn 1 isc & iscsemi is registered trademark isc N-Channel MOSFET...