IRKD56-14 Datasheet | Inchange Semiconductor

FEATURES - Reduced RFI and EMI - Reduced Snubbing - Extensive Characterization of Recovery Parameters - Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS - These devices are ideally suited for power converters, motors drives and other applications where switching losses are significant portion of the total losses. ABSOLUTE MAXIMUM RATINGS SYMBOL PARAMETER CONDITIONS IF(AV) IFSM Repetitive Peak Reverse Voltage tp=10ms Average Forward Current Single phase,haif-wave 180°condition, TC=100℃ Surge Forward Current Single phase,haif-wave，VR=0.6VRRM I2t I2t for fusing Single phase,haif-wave，VR=0.6VRRM Junction Temperature Tstg Storage Temperature Range VALUE UNIT 8.6- 103 A2S -40~150 ℃ -40~150 ℃ THERMAL CHARACTERISTICS SYMBOL PARAMETER Rth j-c Thermal Resistance, Junction to Case MAX 0.7 UNIT ℃/W isc website：.iscsemi.cn 1 isc & iscsemi is registered...