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isc N-Channel MOSFET Transistor
INCHANGE Semiconductor
IRL3713S
·FEATURES ·With TO-263(D2PAK) packaging ·With low gate drive requirements ·Easy to drive ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device
performance and reliable operation
·APPLICATIONS ·High frequency isolated DC-DC converters with
synchronous rectification for telecom and industrial use
·ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE
VDSS
Drain-Source Voltage
30
VGSS ID IDM PD Tj
Gate-Source Voltage
Drain Current-Continuous@Tc=25℃ Tc=100℃
Drain Current-Single Pulsed
Total Dissipation
@Tc=25℃ Tc=100℃
Operating Junction Temperature
±20
260 180
1040
330 170
-55~175
Tstg
Storage Temperature
-55~175
UNIT V V A A W ℃ ℃
·THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
Rth(ch-c) Ch