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IRL3803V - N-Channel MOSFET

Datasheet Summary

Description

design,provide the designer with an extremely efficient and reliable device for use in a wide variety of applications.

ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE VDSS Drain-Source Voltage 30 VGS Gate-Source V

Features

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  • Static drain-source on-resistance: RDS(on) ≤5.5mΩ.
  • Enhancement mode.
  • Fast Switching Speed.
  • 100% avalanche tested.
  • Minimum Lot-to-Lot variations for robust device performance and reliable operation.

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Datasheet preview – IRL3803V

Datasheet Details

Part number IRL3803V
Manufacturer INCHANGE
File Size 241.31 KB
Description N-Channel MOSFET
Datasheet download datasheet IRL3803V Datasheet
Additional preview pages of the IRL3803V datasheet.

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Full PDF Text Transcription

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isc N-Channel MOSFET Transistor IRL3803V，IIRL3803V ·FEATURES ·Static drain-source on-resistance: RDS(on) ≤5.5mΩ ·Enhancement mode ·Fast Switching Speed ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation ·DESCRIPTION ·Combine with the fast switching speed and ruggedized device design,provide the designer with an extremely efficient and reliable device for use in a wide variety of applications. ·ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE VDSS Drain-Source Voltage 30 VGS Gate-Source Voltage ±16 ID Drain Current-Continuous 140 IDM Drain Current-Single Pulsed 470 PD Total Dissipation @TC=25℃ 200 Tj Max.
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