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IRL3803V - N-Channel MOSFET

General Description

design,provide the designer with an extremely efficient and reliable device for use in a wide variety of applications.

ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE VDSS Drain-Source Voltage 30 VGS Gate-Source V

Key Features

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  • Static drain-source on-resistance: RDS(on) ≤5.5mΩ.
  • Enhancement mode.
  • Fast Switching Speed.
  • 100% avalanche tested.
  • Minimum Lot-to-Lot variations for robust device performance and reliable operation.

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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isc N-Channel MOSFET Transistor IRL3803V，IIRL3803V ·FEATURES ·Static drain-source on-resistance: RDS(on) ≤5.5mΩ ·Enhancement mode ·Fast Switching Speed ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation ·DESCRIPTION ·Combine with the fast switching speed and ruggedized device design,provide the designer with an extremely efficient and reliable device for use in a wide variety of applications. ·ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE VDSS Drain-Source Voltage 30 VGS Gate-Source Voltage ±16 ID Drain Current-Continuous 140 IDM Drain Current-Single Pulsed 470 PD Total Dissipation @TC=25℃ 200 Tj Max.