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IRLR8256 - N-Channel MOSFET

Key Features

  • Static drain-source on-resistance: RDS(on)≤5.7mΩ.
  • Enhancement mode:.
  • 100% avalanche tested.
  • Minimum Lot-to-Lot variations for robust device performance and reliable operation.

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isc N-Channel MOSFET Transistor IRLR8256, IIRLR8256 ·FEATURES ·Static drain-source on-resistance: RDS(on)≤5.7mΩ ·Enhancement mode: ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation ·DESCRITION ·High efficiency ·ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE VDSS Drain-Source Voltage 25 VGS Gate-Source Voltage ±20 ID Drain Current-Continuous 81 IDM Drain Current-Single Pulsed 325 PD Total Dissipation @TC=25℃ 63 Tj Max. Operating Junction Temperature 175 Tstg Storage Temperature -55~175 UNIT V V A A W ℃ ℃ ·THERMAL CHARACTERISTICS SYMBOL PARAMETER Rth(j-c) Channel-to-case thermal resistance Rth(j-a) Channel-to-ambient thermal resistance MAX 2.4 110 UNIT ℃/W ℃/W isc website：www.iscsemi.