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IRLR8259 - N-Channel MOSFET

Key Features

  • Static drain-source on-resistance: RDS(on)≤8.7mΩ.
  • Enhancement mode:.
  • 100% avalanche tested.
  • Minimum Lot-to-Lot variations for robust device performance and reliable operation.

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isc N-Channel MOSFET Transistor IRLR8259, IIRLR8259 ·FEATURES ·Static drain-source on-resistance: RDS(on)≤8.7mΩ ·Enhancement mode: ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation ·DESCRITION ·High Frequency Synchronous Buck Converters For Computer Processor Power ·ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE VDSS Drain-Source Voltage 25 VGS Gate-Source Voltage ±20 ID Drain Current-Continuous 57 IDM Drain Current-Single Pulsed 230 PD Total Dissipation @TC=25℃ 48 Tj Max.