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IRLS3034PBF - N-Channel MOSFET

Datasheet Summary

Features

  • With TO-263( D2PAK ) packaging.
  • High speed switching.
  • Low gate input resistance.
  • Standard level gate drive.
  • Easy to use.
  • 100% avalanche tested.
  • Minimum Lot-to-Lot variations for robust device performance and reliable operation.

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Datasheet preview – IRLS3034PBF

Datasheet Details

Part number IRLS3034PBF
Manufacturer INCHANGE
File Size 225.06 KB
Description N-Channel MOSFET
Datasheet download datasheet IRLS3034PBF Datasheet
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Full PDF Text Transcription

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isc N-Channel MOSFET Transistor ·FEATURES ·With TO-263( D2PAK ) packaging ·High speed switching ·Low gate input resistance ·Standard level gate drive ·Easy to use ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation ·APPLICATIONS ·Power supply ·Switching applications ·ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE VDSS Drain-Source Voltage 40 VGS Gate-Source Voltage ±20 ID Drain Current-Continuous 195 PD Total Dissipation @TC=25℃ 375 Tj Max. Operating Junction Temperature -55~175 Tstg Storage Temperature -55~175 UNIT V V A W ℃ ℃ ·THERMAL CHARACTERISTICS SYMBOL PARAMETER MAX UNIT Rth(j-c) Channel-to-case thermal resistance 0.4 ℃/W IRLS3034PBF isc website：www.iscsemi.
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