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Inchange Semiconductor
ISCN366P
DESCRIPTION - DC Current Gain- : h FE= 20-60@IC = 0.5A - Collector-Emitter Sustaining Voltage- : VCEO(SUS)= 400V(Min) - Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS - Designed for use in general purpose power amplifier and switching applications. ABSOLUTE MAXIMUM RATINGS (Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage VCEO Collector-Emitter Voltage VEBO Emitter-Base Voltage Collector Current -Continuous Collector Power Dissipation@ TC=25℃ Tj Junction Temperature ℃ Tstg Storage Temperature -65~150 ℃ THERMAL CHARACTERISTICS SYMBOL PARAMETER Rth j-c Thermal Resistance,Junction to Case MAX 1.56 UNIT ℃/W ISCN366P isc website:.iscsemi.cn...