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ISCN366P Datasheet

Manufacturer: Inchange Semiconductor
ISCN366P datasheet preview

ISCN366P Details

Part number ISCN366P
Datasheet ISCN366P-INCHANGE.pdf
File Size 251.61 KB
Manufacturer Inchange Semiconductor
Description Silicon NPN Power Transistor
ISCN366P page 2

ISCN366P Overview

hFE= 20-60@IC = 0.5A ·Collector-Emitter Sustaining Voltage- : VCEO(SUS)= 400V(Min) ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for use in general purpose power amplifier and switching applications. IB= 0.8A VBE(on)-1 Base-Emitter On Voltage IC= 2A ;IB= 0.4A VBE(on)-2 Base-Emitter On Voltage IC= 4A;.

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