| Part number | ISCN366P |
|---|---|
| Datasheet | ISCN366P-INCHANGE.pdf |
| File Size | 251.61 KB |
| Manufacturer | Inchange Semiconductor |
| Description | Silicon NPN Power Transistor |
|
|
hFE= 20-60@IC = 0.5A ·Collector-Emitter Sustaining Voltage- : VCEO(SUS)= 400V(Min) ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for use in general purpose power amplifier and switching applications. IB= 0.8A VBE(on)-1 Base-Emitter On Voltage IC= 2A ;IB= 0.4A VBE(on)-2 Base-Emitter On Voltage IC= 4A;.
See all Inchange Semiconductor datasheets
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