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ISCNH363N Datasheet

Manufacturer: Inchange Semiconductor
ISCNH363N datasheet preview

ISCNH363N Details

Part number ISCNH363N
Datasheet ISCNH363N-INCHANGE.pdf
File Size 272.18 KB
Manufacturer Inchange Semiconductor
Description Silicon NPN Power Transistor
ISCNH363N page 2

ISCNH363N Overview

·motor drive, DC-DC converter, power switch and solenoid drive. RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VDSS Drain-Source Voltage 300 V VGS Gate-Source Voltage-Continuous ±30 V ID Drain Current-Continuous 59 A PD Total Dissipation @TC=25℃ 235 W TJ Max. Operating Junction Temperature -55~150 ℃ Tstg Storage Temperature -55~150 ℃ THERMAL CHARACTERISTICS SYMBOL PARAMETER Rth j-c , Junction to Case MAX 0.53 UNIT ℃/W...

ISCNH363N Key Features

  • Drain Current : ID= 59A@ TC=25℃ -Drain Source Voltage

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