ISCNH376L Datasheet PDF

Inchange Semiconductor ISCNH376L

iscsemi is registered trademark isc N-Channel MOSFET Transistor ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER V(BR)DSS Drain-Source Breakdown Voltage VGS(th) Gate Threshold Voltage RDS(on) Drain-Source On-Resistance IGSS Gate-Body Leakage Current IDSS Zero Gate Voltage Drain Current VSD Forward On-Voltage CONDITIONS VGS= 0; ID= 1.0mA VDS= 10V; ID= 1.0mA VGS= 10V; ID= 36A VGS= ±30V;VDS= 0 VDS= 500V; VGS= 0 IS= 36A; VGS= 0 ISCNH376L MIN MAX UNIT 500 -- V 3.0 5.0 V -- 50 mΩ -- ±0.1 uA -- 10 uA -- 1.2 V NOTICE： ISC reserves the rights to make changes of the content... The information contained herein is presented only as a guide for the applications of our products. The products are not designed for use in equipment which require specialized quality and/or reliability, or in equipment which could have applications in hazardous environments, aerospace industry, or medical field.