IXFA180N10T2 - N-Channel MOSFET

Inchange Semiconductor

Key Features

With TO-263( D2PAK ) packaging.
High speed switching.
Low gate input resistance.
Standard level gate drive.
Easy to use.
100% avalanche tested.
Minimum Lot-to-Lot variations for robust device performance and reliable operation.

IXFA180N10T2 n-channel mosfet by Inchange Semiconductor - Datasheet Preview

Datasheet Details

Part number	IXFA180N10T2
Manufacturer	Inchange Semiconductor
File Size	200.05 KB
Description	N-Channel MOSFET
Datasheet	IXFA180N10T2 Datasheet

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Full PDF Text Transcription (Reference)

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isc N-Channel MOSFET Transistor INCHANGE Semiconductor IXFA180N10T2 ·FEATURES ·With TO-263( D2PAK ) packaging ·High speed switching ·Low gate input resistance ·Standard level gate drive ·Easy to use ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation ·APPLICATIONS ·Power supply ·Switching applications ·ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE VDSS Drain-Source Voltage 100 VGSS ID IDM Gate-Source Voltage Drain Current-Continuous@TC=25℃ TC=100℃ Drain Current-Single Pulsed ±30 180 120 450 PD Total Dissipation 480 Tj Operating Junction Temperature 175 Tstg Storage Temperature -55~175 UNIT V V A A W ℃ ℃ ·THERMAL CHARACTERISTICS SYMBOL PARAMETER Rth(ch-c) Channel-to-case thermal resistance Rth(ch-a)