Download IXFA36N20X3 Datasheet PDF
Inchange Semiconductor
IXFA36N20X3
FEATURES - Static drain-source on-resistance: RDS(on) ≤ 45mΩ@VGS=10V - Fully characterized avalanche voltage and current - 100% Avalanche Tested - Minimum Lot-to-Lot variations for robust device performance and reliable operation - APPLICATION - Switched mode power supplies - DC-DC converters - ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE VDSS Drain-Source Voltage Gate-Source Voltage ±20 Drain Current-Continuous Drain Current-Single Pulsed Total Dissipation @TC=25℃ Tj Operating Junction Temperature -55~150 Tstg Storage Temperature -55~150 UNIT V V A A W ℃ ℃ - THERMAL CHARACTERISTICS SYMBOL PARAMETER Rth(j-c) Junction-to-case thermal resistance MAX 0.73 UNIT ℃/W isc website:.iscsemi.cn 1 isc & iscsemi is registered trademark isc N-Channel MOSFET...