Download IXFH110N15T2 Datasheet PDF
Inchange Semiconductor
IXFH110N15T2
FEATURES - Static drain-source on-resistance: RDS(on) ≤ 13mΩ@VGS=10V - Fully characterized avalanche voltage and current - 100% avalanche tested - Minimum Lot-to-Lot variations for robust device performance and reliable operation - APPLICATION - DC/DC Converters - High Speed Power Switching Applications - ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VDSS Drain-Source Voltage Gate-Source Voltage ±20 Drain Current-Continuous Drain Current-Single Pulsed Total Dissipation @TC=25℃ Tj Operating Junction Temperature -55~175 ℃ Tstg Storage Temperature -55~175 ℃ - THERMAL CHARACTERISTICS SYMBOL...