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IXFH14N85X - N-Channel MOSFET

Key Features

  • Drain Source Voltage- : VDSS ≥850V.
  • Static Drain-Source On-Resistance : RDS(on) ≤ 550mΩ@VGS= 10V.
  • Fast Switching.
  • 100% avalanche tested.
  • Minimum Lot-to-Lot variations for robust device performance and reliable operation.

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isc N-Channel MOSFET Transistor ·FEATURES ·Drain Source Voltage- : VDSS ≥850V ·Static Drain-Source On-Resistance : RDS(on) ≤ 550mΩ@VGS= 10V ·Fast Switching ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation ·APPLICATIONS ·DC-DC Converters ·Switch-Mode and Resonant-Mode Power Supplies ·ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VDSS Drain-Source Voltage 850 V VGS Gate-Source Voltage-Continuous ±30 V ID Drain Current-Continuous 14 A IDM Drain Current-Single Plused 35 A PD Total Dissipation @TC=25℃ 460 W Tj Max.