IXFH18N60X Datasheet (PDF) Download
Inchange Semiconductor
IXFH18N60X

Key Features

  • Static drain-source on-resistance: RDS(on) ≤ 230mΩ@VGS=10V
  • Fully characterized avalanche voltage and current
  • 100% Avalanche Tested
  • Minimum Lot-to-Lot variations for robust device performance and reliable operation
IXFH18N60X datasheet preview

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