IXFH220N06T3 - N-Channel MOSFET

Features

Static drain-source on-resistance: RDS(on) ≤ 4mΩ@VGS=10V.
Fully characterized avalanche voltage and current.
100% avalanche tested.
Minimum Lot-to-Lot variations for robust device performance and reliable operation.

INCHANGE

Datasheet Details

Part number	IXFH220N06T3
Manufacturer	Inchange Semiconductor
File Size	334.77 KB
Description	N-Channel MOSFET
Datasheet	IXFH220N06T3 Datasheet
Additional preview pages of the IXFH220N06T3 datasheet.

📁 Similar Datasheet

IXFH220N06T3 - Power MOSFET (IXYS)
IXFH22N50P - PolarHV HiPerFET Power MOSFET (IXYS)
IXFH22N55 - HiPerFET Power MOSFET (IXYS)
IXFH22N60P - PolarHV HiPerFET Power MOSFETs (IXYS)
IXFH22N60P3 - Polar3 HiperFET Power MOSFETs (IXYS Corporation)
IXFH22N60P3 - Power MOSFET (IXYS Corporation)
IXFH22N65X2 - Power MOSFET (IXYS)
IXFH20N100P - Polar Power MOSFET HiPerFET (IXYS Corporation)
IXFH20N50P3 - Power MOSFET (IXYS)
IXFH20N60 - (IXFHxxxx) HiPerRF Power MOSFETs F-Class: MegaHertz Switching (IXYS Corporation)

Other Datasheets by INCHANGE

IXFH22N65X2 - N-Channel MOSFET
IXFH20N85X - N-Channel MOSFET
IXFH230N075T2 - N-Channel MOSFET
IXFH230N10T - N-Channel MOSFET
IXFH24N60X - N-Channel MOSFET
IXFH24N65X2 - N-Channel MOSFET
IXFH102N15T - N-Channel MOSFET
IXFH110N15T2 - N-Channel MOSFET

Full PDF Text Transcription

Click to expand full text

isc N-Channel MOSFET Transistor ·FEATURES ·Static drain-source on-resistance: RDS(on) ≤ 4mΩ@VGS=10V ·Fully characterized avalanche voltage and current ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation ·APPLICATION ·DC/DC Converters ·High Current Switching Applications ·ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VDSS Drain-Source Voltage 60 V VGS Gate-Source Voltage ±20 V ID Drain Current-Continuous 220 A IDM Drain Current-Single Pulsed 500 A PD Total Dissipation @TC=25℃ 440 W Tj Operating Junction Temperature -55~175 ℃ Tstg Storage Temperature -55~175 ℃ ·THERMAL CHARACTERISTICS SYMBOL PARAMETER MAX Rth(j-c) Junction-to-case thermal resistance 0.

Published: Nov 2, 2020 |