IXFH22N65X2 - N-Channel MOSFET

Features

With low gate drive requirements.
Easy to drive.
100% avalanche tested.
Minimum Lot-to-Lot variations for robust device performance and reliable operation.

INCHANGE

Datasheet Details

Part number	IXFH22N65X2
Manufacturer	Inchange Semiconductor
File Size	319.61 KB
Description	N-Channel MOSFET
Datasheet	IXFH22N65X2 Datasheet
Additional preview pages of the IXFH22N65X2 datasheet.

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Full PDF Text Transcription

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isc N-Channel MOSFET Transistor INCHANGE Semiconductor IXFH22N65X2 ·FEATURES ·With low gate drive requirements ·Easy to drive ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation ·APPLICATIONS ·Switching applications ·ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VDSS Drain-Source Voltage 650 V VGSS Gate-Source Voltage ±30 V ID Drain Current-Continuous 22 A IDM Drain Current-Single Pulsed 44 A PD Total Dissipation 390 W Tj Operating Junction Temperature -55~150 ℃ Tstg Storage Temperature -55~150 ℃ ·THERMAL CHARACTERISTICS SYMBOL PARAMETER MAX UNIT Rth(ch-c) Channel-to-case thermal resistance 0.32 ℃/W isc website：www.iscsemi.

Published: Nov 2, 2020 |