IXFP220N06T3 Overview
isc N-Channel MOSFET Transistor IXFP220N06T3 ·FEATURES ·Static drain-source on-resistance: RDS(on) ≤ 4mΩ@VGS=10V ·Fully characterized avalanche voltage and current ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation ·APPLICATION ·DC/DC Converters ·High Current Switching Applications ·
IXFP220N06T3 Key Features
- Static drain-source on-resistance
- APPLICATION -DC/DC Converters -High Current Switching
