IXFP22N65X2 - N-Channel MOSFET

Inchange Semiconductor

Key Features

With low gate drive requirements.
Easy to drive.
100% avalanche tested.
Minimum Lot-to-Lot variations for robust device performance and reliable operation.

IXFP22N65X2 n-channel mosfet by Inchange Semiconductor - Datasheet Preview

Datasheet Details

Part number	IXFP22N65X2
Manufacturer	Inchange Semiconductor
File Size	200.88 KB
Description	N-Channel MOSFET
Datasheet	IXFP22N65X2 Datasheet

📁 Similar Datasheet

Part Number	Description	Manufacturer
IXFP22N65X2	Power MOSFET	IXYS
IXFP22N65X2M	Power MOSFET	IXYS
IXFP22N60P3	Polar3 HiperFET Power MOSFETs	IXYS Corporation
IXFP22N60P3	Power MOSFET	IXYS Corporation
IXFP220N06T3	Power MOSFET	IXYS

Other Datasheets by Inchange Semiconductor

Part Number	Description
IXFP22N65X2M	N-Channel MOSFET
IXFP220N06T3	N-Channel MOSFET
IXFP20N85X	N-Channel MOSFET
IXFP230N075T2	N-Channel MOSFET
IXFP24N60X	N-Channel MOSFET

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text

isc N-Channel MOSFET Transistor INCHANGE Semiconductor IXFP22N65X2 ·FEATURES ·With low gate drive requirements ·Easy to drive ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation ·APPLICATIONS ·Switching applications ·ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE VDSS Drain-Source Voltage 650 VGSS Gate-Source Voltage ±30 ID Drain Current-Continuous 22 IDM Drain Current-Single Pulsed 44 PD Total Dissipation 390 Tj Operating Junction Temperature -55~150 Tstg Storage Temperature -55~150 UNIT V V A A W ℃ ℃ ·THERMAL CHARACTERISTICS SYMBOL PARAMETER Rth(ch-c) Channel-to-case thermal resistance MAX 0.32 UNIT ℃/W isc website：www.iscsemi.