IXFP34N65X2M - N-Channel MOSFET

Features

Drain-source on-resistance: RDS(on) ≤ 100mΩ@10V.
Fast Switching Speed.
100% avalanche tested.
Minimum Lot-to-Lot variations for robust device performance and reliable operation.

INCHANGE

Datasheet Details

Part number	IXFP34N65X2M
Manufacturer	INCHANGE
File Size	238.85 KB
Description	N-Channel MOSFET
Datasheet	IXFP34N65X2M Datasheet
Additional preview pages of the IXFP34N65X2M datasheet.

📁 Similar Datasheet

IXFP34N65X2M - Power MOSFET (IXYS)
IXFP34N65X2 - Power MOSFET (IXYS)
IXFP30N60X - Power MOSFET (IXYS)
IXFP36N20X3 - Power MOSFET (IXYS)
IXFP36N20X3M - Power MOSFET (IXYS)
IXFP38N30X3M - Power MOSFET (Littelfuse)
IXFP3N120 - HiPerFET Power MOSFETs (IXYS Corporation)
IXFP3N50PM - Power MOSFET (IXYS Corporation)
IXFP3N80 - Power MOSFET (IXYS Corporation)
IXFP05N100M - High Voltage HiperFET (IXYS Corporation)

Other Datasheets by INCHANGE

IXFP34N65X2 - N-Channel MOSFET
IXFP30N60X - N-Channel MOSFET
IXFP36N20X3 - N-Channel MOSFET
IXFP36N20X3M - N-Channel MOSFET
IXFP102N15T - N-Channel MOSFET
IXFP110N15T2 - N-Channel MOSFET
IXFP12N65X2 - N-Channel MOSFET
IXFP12N65X2M - N-Channel MOSFET

Full PDF Text Transcription

Click to expand full text

isc N-Channel MOSFET Transistor IXFP34N65X2M ·FEATURES · Drain-source on-resistance: RDS(on) ≤ 100mΩ@10V ·Fast Switching Speed ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation ·APPLICATIONS ·High fast switching Power Supply ·ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE VDSS Drain-Source Voltage 650 VGS Gate-Source Voltage ±30 ID Drain Current-Continuous 34 IDM Drain Current-Single Pulsed 68 PD Total Dissipation @TC=25℃ 40 Tj Max. Operating Junction Temperature 150 Tstg Storage Temperature -55~150 UNIT V V A A W ℃ ℃ ·THERMAL CHARACTERISTICS SYMBOL PARAMETER Rth(ch-c) Channel-to-case thermal resistance MAX 3.125 UNIT ℃/W isc website：www.iscsemi.

Published: Nov 2, 2020 |