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IXFP34N65X2M - N-Channel MOSFET

Key Features

  • Drain-source on-resistance: RDS(on) ≤ 100mΩ@10V.
  • Fast Switching Speed.
  • 100% avalanche tested.
  • Minimum Lot-to-Lot variations for robust device performance and reliable operation.

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isc N-Channel MOSFET Transistor IXFP34N65X2M ·FEATURES · Drain-source on-resistance: RDS(on) ≤ 100mΩ@10V ·Fast Switching Speed ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation ·APPLICATIONS ·High fast switching Power Supply ·ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE VDSS Drain-Source Voltage 650 VGS Gate-Source Voltage ±30 ID Drain Current-Continuous 34 IDM Drain Current-Single Pulsed 68 PD Total Dissipation @TC=25℃ 40 Tj Max. Operating Junction Temperature 150 Tstg Storage Temperature -55~150 UNIT V V A A W ℃ ℃ ·THERMAL CHARACTERISTICS SYMBOL PARAMETER Rth(ch-c) Channel-to-case thermal resistance MAX 3.125 UNIT ℃/W isc website：www.iscsemi.