IXFX420N10T - N-Channel MOSFET

Inchange Semiconductor

Key Features

With TO-247 packaging.
With low gate drive requirements.
Easy to drive.
100% avalanche tested.
Minimum Lot-to-Lot variations for robust device performance and reliable operation.

IXFX420N10T n-channel mosfet by Inchange Semiconductor - Datasheet Preview

Datasheet Details

Part number	IXFX420N10T
Manufacturer	Inchange Semiconductor
File Size	256.75 KB
Description	N-Channel MOSFET
Datasheet	IXFX420N10T Datasheet

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Full PDF Text Transcription (Reference)

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isc N-Channel MOSFET Transistor ·FEATURES ·With TO-247 packaging ·With low gate drive requirements ·Easy to drive ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation ·APPLICATIONS ·Switching applications ·ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE VDSS Drain-Source Voltage 100 VGSS Gate-Source Voltage ±30 ID Drain Current-Continuous 420 IDM Drain Current-Single Pulsed 1000 PD Total Dissipation 1670 Tj Operating Junction Temperature -55~175 Tstg Storage Temperature -55~175 UNIT V V A A W ℃ ℃ ·THERMAL CHARACTERISTICS SYMBOL PARAMETER Rth(ch-c) Channel-to-case thermal resistance MAX 0.09 UNIT ℃/W IXFX420N10T isc website：www.iscsemi.