IXFY36N20X3 - N-Channel MOSFET

Features

With To-252(DPAK) package.
Low input capacitance and gate charge.
Low gate input resistance.
100% avalanche tested.
Minimum Lot-to-Lot variations for robust device performance and reliable operation.

INCHANGE

Datasheet Details

Part number	IXFY36N20X3
Manufacturer	INCHANGE
File Size	257.93 KB
Description	N-Channel MOSFET
Datasheet	IXFY36N20X3 Datasheet
Additional preview pages of the IXFY36N20X3 datasheet.

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Full PDF Text Transcription

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Isc N-Channel MOSFET Transistor ·FEATURES ·With To-252(DPAK) package ·Low input capacitance and gate charge ·Low gate input resistance ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation ·APPLICATIONS ·Switching applications ·ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE VDSS Drain-Source Voltage 200 VGSS Gate-Source Voltage ±30 ID Drain Current-Continuous 36 IDM Drain Current-Single Pulsed 145 PD Total Dissipation @TC=25℃ 170 Tch Max. Operating Junction Temperature 150 Tstg Storage Temperature -55~150 UNIT V V A A W ℃ ℃ ·THERMAL CHARACTERISTICS SYMBOL PARAMETER Rth(ch-c) Channel-to-case thermal resistance MAX 0.73 UNIT ℃/W IXFY36N20X3 isc website：www.iscsemi.

Published: Oct 7, 2020 |