IXKP20N60C5 - N-Channel MOSFET

Features

Drain Current.
ID= 20A@ TC=25℃.
Drain Source Voltage- : VDSS= 600V(Min).
Static Drain-Source On-Resistance : RDS(on) = 180mΩ(Max).
100% avalanche tested.
Minimum Lot-to-Lot variations for robust device performance and reliable operation.

IXKP20N60C5 N-Channel MOSFET by INCHANGE - Datasheet Preview — Datasheet preview – IXKP20N60C5

Datasheet Details

Part number	IXKP20N60C5
Manufacturer	Inchange Semiconductor
File Size	268.26 KB
Description	N-Channel MOSFET
Datasheet	IXKP20N60C5 Datasheet
Additional preview pages of the IXKP20N60C5 datasheet.

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Full PDF Text Transcription

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isc N-Channel MOSFET Transistor FEATURES ·Drain Current –ID= 20A@ TC=25℃ ·Drain Source Voltage- : VDSS= 600V(Min) ·Static Drain-Source On-Resistance : RDS(on) = 180mΩ(Max) ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Switched mode power supplies ·Uninterruptible power supplies ·Power factor correction ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VDSS Drain-Source Voltage VGS Gate-Source Voltage-Continuous ID Drain Current-Continuous IDM Drain Current-Single Pluse PD Total Dissipation @TC=25℃ TJ Max.

Published: Oct 7, 2020 |