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IXKP24N60C5 - N-Channel MOSFET

Features

  • Static drain-source on-resistance: RDS(on) ≤ 0.165Ω@VGS=10V.
  • Fully characterized avalanche voltage and current.
  • 100% avalanche tested.
  • Minimum Lot-to-Lot variations for robust device performance and reliable operation.

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isc N-Channel MOSFET Transistor IXKP24N60C5 ·FEATURES ·Static drain-source on-resistance: RDS(on) ≤ 0.165Ω@VGS=10V ·Fully characterized avalanche voltage and current ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation ·APPLICATION ·Switched mode power supplies ·Uninterruptible power supplies ·ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE VDSS Drain-Source Voltage 600 VGS Gate-Source Voltage ±20 ID Drain Current-Continuous 24 Tj Operating Junction Temperature -55~150 Tstg Storage Temperature -55~150 UNIT V V A ℃ ℃ ·THERMAL CHARACTERISTICS SYMBOL PARAMETER Rth(j-c) Junction-to-case thermal resistance MAX 0.5 UNIT ℃/W isc website：www.iscsemi.
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