IXTA230N04T4 - N-Channel MOSFET

Datasheet Summary

Features

With TO-220F packaging.
High speed switching.
Low gate input resistance.
Standard level gate drive.
Easy to use.
100% avalanche tested.
Minimum Lot-to-Lot variations for robust device performance and reliable operation.

INCHANGE

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Datasheet Details

Part number	IXTA230N04T4
Manufacturer	INCHANGE
File Size	246.17 KB
Description	N-Channel MOSFET
Datasheet	IXTA230N04T4 Datasheet
Additional preview pages of the IXTA230N04T4 datasheet.

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Full PDF Text Transcription

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isc N-Channel MOSFET Transistor ·FEATURES ·With TO-220F packaging ·High speed switching ·Low gate input resistance ·Standard level gate drive ·Easy to use ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation ·APPLICATIONS ·Power supply ·Switching applications ·ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VDSS Drain-Source Voltage 40 V VGSS Gate-Source Voltage ±15 V ID Drain Current-Continuous@Tc=25℃ Tc=100℃ 230 160 A IDM Drain Current-Single Pulsed 700 A PD Total Dissipation 40 W Tj Operating Junction Temperature 175 ℃ Tstg Storage Temperature -55~175 ℃ ·THERMAL CHARACTERISTICS SYMBOL PARAMETER Rth(ch-c) Channel-to-case thermal resistance MAX 3.

Published: Nov 10, 2020 |