Click to expand full text
isc P-Channel MOSFET Transistor
IXTA32P05T
·FEATURES ·Static drain-source on-resistance:
RDS(on)≤39mΩ ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device
performance and reliable operation
·APPLICATION ·Hight side switching ·Current regulators ·Automatic test equipment
·ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE
UNIT
VDSS
Drain-Source Voltage
-50
V
VGS
Gate-Source Voltage
±15
V
ID
Drain Current-Continuous
-32
A
IDM
Drain Current-Single Pulsed
-110
A
PD
Total Dissipation @TC=25℃
83
W
Tj
Operating Junction Temperature
-55~150
℃
Tstg
Storage Temperature
-55~150
℃
·THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
Rth(j-c)
Channel-to-case thermal resistance
MAX 1.5
UNIT ℃/W
isc website：www.iscsemi.
IXTA32P05T Datasheet
