IXTA52P10P - P-Channel MOSFET

Features

Static drain-source on-resistance: RDS(on)≤50mΩ.
100% avalanche tested.
Minimum Lot-to-Lot variations for robust device performance and reliable operation.

INCHANGE

Datasheet Details

Part number	IXTA52P10P
Manufacturer	INCHANGE
File Size	247.20 KB
Description	P-Channel MOSFET
Datasheet	IXTA52P10P Datasheet
Additional preview pages of the IXTA52P10P datasheet.

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Full PDF Text Transcription

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isc P-Channel MOSFET Transistor ·FEATURES ·Static drain-source on-resistance: RDS(on)≤50mΩ ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation ·APPLICATION ·Hight side switching ·Current regulators ·Automatic test equipment ·ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VDSS Drain-Source Voltage -100 V VGS Gate-Source Voltage ±20 V ID Drain Current-Continuous -52 A IDM Drain Current-Single Pulsed -130 A PD Total Dissipation @TC=25℃ 300 W Tj Operating Junction Temperature -55~150 ℃ Tstg Storage Temperature -55~150 ℃ ·THERMAL CHARACTERISTICS SYMBOL PARAMETER Rth(j-c) Channel-to-case thermal resistance MAX 0.42 UNIT ℃/W IXTA52P10P isc website：www.iscsemi.

Published: Nov 5, 2020 |