Full PDF Text Transcription for IXTA60N20T (Reference)
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isc N-Channel MOSFET Transistor ·FEATURES ·Static drain-source on-resistance: RDS(on) ≤ 40mΩ@VGS=10V ·Fully characterized avalanche voltage and current ·100% avalanche te...
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·Fully characterized avalanche voltage and current ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation ·APPLICATION ·DC/DC Converters ·High Speed Power Switching Applications ·ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE VDSS Drain-Source Voltage 200 VGS Gate-Source Voltage ±20 ID Drain Current-Continuous 60 IDM Drain Current-Single Pulsed 150 PD Total Dissipation @TC=25℃ 300 Tj Operating Junction Temperature -55~175 Tstg Storage Temperature -55~175 UNIT V V A A W ℃ ℃ ·THERMAL CHARACTERISTICS SYMBOL PARAMETER Rth(j-c) Junction-to-case thermal resistance MAX
IXTA60N20T Datasheet
