Datasheet4U Logo Datasheet4U.com

IXTA88N085T - N-Channel MOSFET

Key Features

  • Static drain-source on-resistance: RDS(on) ≤ 11mΩ@VGS=10V.
  • Fully characterized avalanche voltage and current.
  • 100% avalanche tested.
  • Minimum Lot-to-Lot variations for robust device performance and reliable operation.

📥 Download Datasheet

📁 Similar Datasheet

Part Number Description Manufacturer
IXTA88N085T Power MOSFET IXYS Corporation
IXTA88N085T7 Power MOSFET IXYS Corporation
IXTA80N075L2 Power MOSFET IXYS
IXTA80N10T Power MOSFET IXYS
IXTA80N10T7 Power MOSFET IXYS Corporation

Other Datasheets by Inchange Semiconductor

Part Number Description
IXTA80N075L2 N-Channel MOSFET
IXTA80N10T N-Channel MOSFET
IXTA80N12T2 N-Channel MOSFET
IXTA8N50P N-Channel MOSFET
IXTA8N65X2 N-Channel MOSFET

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
isc N-Channel MOSFET Transistor ·FEATURES ·Static drain-source on-resistance: RDS(on) ≤ 11mΩ@VGS=10V ·Fully characterized avalanche voltage and current ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation ·APPLICATION ·DC/DC Converters ·High Current Switching Applications ·ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE VDSS Drain-Source Voltage 85 VGS Gate-Source Voltage ±20 ID Drain Current-Continuous 88 IDM Drain Current-Single Pulsed 240 PD Total Dissipation @TC=25℃ 230 Tj Operating Junction Temperature -55~175 Tstg Storage Temperature -40~175 UNIT V V A A W ℃ ℃ ·THERMAL CHARACTERISTICS SYMBOL PARAMETER Rth(j-c) Junction-to-case thermal resistance MAX 0.