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IXTH180N085T - N-Channel MOSFET

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Overview

isc N-Channel MOSFET Transistor ·.

Key Features

  • Static drain-source on-resistance: RDS(on) ≤ 5.5mΩ@VGS=10V.
  • Fully characterized avalanche voltage and current.
  • 100% avalanche tested.
  • Minimum Lot-to-Lot variations for robust device performance and reliable operation.

📁 Similar Datasheet

Brand Logo Part Number Description Manufacturer
IXYS Corporation Logo IXTH180N085T Power MOSFET IXYS Corporation

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