Datasheet Summary
isc N-Channel MOSFET Transistor
- Features
- Static drain-source on-resistance:
RDS(on) ≤ 6.4mΩ@VGS=10V
- Fully characterized avalanche voltage and current
- 100% avalanche tested
- Minimum Lot-to-Lot variations for robust device performance and reliable operation
- APPLICATION
- DC/DC Converters
- High Speed Power Switching Applications
-...
