Datasheet Summary
isc N-Channel MOSFET Transistor
- Features
- Drain Source Voltage-
: VDSS= 650V(Min)
- Static Drain-Source On-Resistance
: RDS(on) ≤ 210mΩ@VGS= 10V
- Fast Switching
- 100% avalanche tested
- Minimum Lot-to-Lot variations for robust device performance and reliable operation
- APPLICATIONS
- Easy to Mount
- Space Savings
- High Power Density
-...
