Full PDF Text Transcription for IXTH26N60P (Reference)
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IXTH26N60P. For precise diagrams, and layout, please refer to the original PDF.
rce On-Resistance : RDS(on) = 270mΩ(Max) ·Fast Switching ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation ·APPLICATIONS ·Switching Voltage Regulators ·ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VDSS Drain-Source Voltage 600 V VGS Gate-Source Voltage-Continuous ±30 V ID Drain Current-Continuous 26 A IDM Drain Current-Single Plused 65 A PD Total Dissipation @TC=25℃ 460 W Tj Max. Operating Junction Temperature -55~150 ℃ Tstg Storage Temperature -55~150 ℃ ·THERMAL CHARACTERISTICS SYMBOL PARAMETER MAX UNIT Rth j-c Thermal Resistance, Junction to Case 0.
IXTH26N60P Datasheet
