IXTH60N20L2 - N-Channel MOSFET

Datasheet Summary

Features

With TO-247 packaging.
High speed switching.
Very high commutation ruggedness.
Easy to use.
100% avalanche tested.
Minimum Lot-to-Lot variations for robust device performance and reliable operation.

INCHANGE

📥 Download Datasheet

Datasheet Details

Part number	IXTH60N20L2
Manufacturer	INCHANGE
File Size	206.93 KB
Description	N-Channel MOSFET
Datasheet	IXTH60N20L2 Datasheet
Additional preview pages of the IXTH60N20L2 datasheet.

📁 Similar Datasheet

IXTH60N20L2 - Power MOSFET (IXYS)
IXTH60N15 - Power MOSFET (IXYS)
IXTH62N65X2 - Power MOSFET (IXYS)
IXTH64N10L2 - Power MOSFET (IXYS)
IXTH64N65X - Power MOSFET (IXYS)
IXTH67N10 - N-Channel MOSFET (IXYS Corporation)
IXTH68N20 - Power MOSFET (IXYS Corporation)
IXTH68P20T - P-Channel Power MOSFET (IXYS)
IXTH6N100D2 - N-Channel MOSFET (IXYS)
IXTH6N120 - High Voltage Power MOSFET (IXYS Corporation)

Other Datasheets by INCHANGE

IXTH60N15 - N-Channel MOSFET
IXTH62N65X2 - N-Channel MOSFET
IXTH64N10L2 - N-Channel MOSFET
IXTH64N65X - N-Channel MOSFET
IXTH67N10 - N-Channel MOSFET
IXTH6N80 - N-Channel MOSFET
IXTH6N80A - N-Channel MOSFET
IXTH6N90 - N-Channel MOSFET

Full PDF Text Transcription

Click to expand full text

isc N-Channel MOSFET Transistor ·FEATURES ·With TO-247 packaging ·High speed switching ·Very high commutation ruggedness ·Easy to use ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation ·APPLICATIONS ·PFC stages ·Power supply ·Switching applications INCHANGE Semiconductor IXTH60N20L2 ·ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE VDSS Drain-Source Voltage 200 VGSS Gate-Source Voltage ±30 ID Drain Current-Continuous 60 IDM Drain Current-Single Pulsed 150 PD Total Dissipation 540 Tj Operating Junction Temperature -55~150 Tstg Storage Temperature -55~150 UNIT V V A A W ℃ ℃ ·THERMAL CHARACTERISTICS SYMBOL PARAMETER Rth(ch-c) Channel-to-case thermal resistance MAX 0.23 UNIT ℃/W isc website：www.

Published: Sep 3, 2020 |