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IXTH64N65X - N-Channel MOSFET

Datasheet Summary

Features

  • With TO-247 package.
  • Low input capacitance and gate charge.
  • Low gate input resistance.
  • 100% avalanche tested.
  • Minimum Lot-to-Lot variations for robust device performance and reliable operation.

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Datasheet Details

Part number IXTH64N65X
Manufacturer INCHANGE
File Size 207.49 KB
Description N-Channel MOSFET
Datasheet download datasheet IXTH64N65X Datasheet
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Isc N-Channel MOSFET Transistor INCHANGE Semiconductor IXTH64N65X ·FEATURES ·With TO-247 package ·Low input capacitance and gate charge ·Low gate input resistance ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation ·APPLICATIONS ·Switching applications ·ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE VDSS Drain-Source Voltage 650 VGSS Gate-Source Voltage ±30 ID Drain Current-Continuous 64 IDM Drain Current-Single Pulsed 125 PD Total Dissipation @TC=25℃ 890 Tch Max. Operating Junction Temperature 150 Tstg Storage Temperature -55~150 UNIT V V A A W ℃ ℃ ·THERMAL CHARACTERISTICS SYMBOL PARAMETER Rth(ch-c) Channel-to-case thermal resistance Rth(ch-a) Channel-to-ambient thermal resistance MAX 3.2 62.
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