Full PDF Text Transcription for IXTH80N20L (Reference)
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IXTH80N20L. For precise diagrams, and layout, please refer to the original PDF.
isc N-Channel MOSFET Transistor ·FEATURES ·Static drain-source on-resistance: RDS(on) ≤ 32mΩ@VGS=10V ·Fully characterized avalanche voltage and current ·100% avalanche te...
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·Fully characterized avalanche voltage and current ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation ·APPLICATION ·DC/DC Converter ·Switch-Mode and Resonant-Mode Power Supplies ·ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VDSS Drain-Source Voltage 200 V VGS Gate-Source Voltage ±20 V ID Drain Current-Continuous 80 A IDM Drain Current-Single Pulsed 340 A PD Total Dissipation @TC=25℃ 520 W Tj Operating Junction Temperature -55~150 ℃ Tstg Storage Temperature -55~150 ℃ ·THERMAL CHARACTERISTICS SYMBOL PARAMETER MAX UNIT Rth(j-c) Junction-to-case thermal r
IXTH80N20L Datasheet
