Datasheet4U Logo Datasheet4U.com

IXTH88N15 - N-Channel MOSFET

Key Features

  • Drain Source Voltage- : VDSS= 150V(Min).
  • Static Drain-Source On-Resistance : RDS(on) = 22mΩ(Max).
  • Fast Switching.
  • 100% avalanche tested.
  • Minimum Lot-to-Lot variations for robust device performance and reliable operation.

📥 Download Datasheet

Full PDF Text Transcription for IXTH88N15 (Reference)

Note: Below is a high-fidelity text extraction (approx. 800 characters) for IXTH88N15. For precise diagrams, and layout, please refer to the original PDF.

isc N-Channel MOSFET Transistor ·FEATURES ·Drain Source Voltage- : VDSS= 150V(Min) ·Static Drain-Source On-Resistance : RDS(on) = 22mΩ(Max) ·Fast Switching ·100% avalanch...

View more extracted text
rce On-Resistance : RDS(on) = 22mΩ(Max) ·Fast Switching ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation ·APPLICATIONS ·Switch-Mode and Resonant-Mode Power Supplies ·DC-DC Converters ·AC and DC Motor Drives ·ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VDSS Drain-Source Voltage 150 V VGS Gate-Source Voltage-Continuous ±20 V ID Drain Current-Continuous 88 A IDM Drain Current-Single Plused 352 A PD Total Dissipation @TC=25℃ 400 W Tj Max.