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IXTK110N20L2 - N-Channel MOSFET

Key Features

  • With TO-3PL package.
  • Low input capacitance and gate charge.
  • High speed switching.
  • Low gate input resistance.
  • 100% avalanche tested.
  • Minimum Lot-to-Lot variations for robust device performance and reliable operation.

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Isc N-Channel MOSFET Transistor INCHANGE Semiconductor IXTK110N20L2 ·FEATURES ·With TO-3PL package ·Low input capacitance and gate charge ·High speed switching ·Low gate input resistance ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation ·APPLICATIONS ·Switching applications ·Load switch ·Power management ·ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE VDSS Drain-Source Voltage 200 VGSS Gate-Source Voltage ±30 ID Drain Current-Continuous 110 IDM Drain Current-Single Pulsed 275 PD Total Dissipation @TC=25℃ 960 Tj Max.