IXTM11N80 - N-Channel MOSFET

Product Overview

INCHANGE

Datasheet Details

Part number	IXTM11N80
Manufacturer	INCHANGE
File Size	254.13 KB
Description	N-Channel MOSFET
Datasheet	IXTM11N80 Datasheet
Additional preview pages of the IXTM11N80 datasheet.

Product details

Description

Designed for use in switch mode power supplies and general purpose applications.ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VDSS Drain-Source Voltage VGS Gate-Source Voltage-Continuous ID Drain Current-Continuous IDM Drain Current-Single Pluse PD Total Dissipation @TC=25℃ TJ Max.Operating Junction Temperature Tstg Storage Temperature VALUE UNIT 800 V ±20 V 11 A 44 A 300 W -55~150 ℃ -55~150 ℃ THERMAL CHARACTERISTICS SYMBOL PARAMETER Rth j-c Thermal R

Features

Drain Current ID= 11A@ TC=25℃.
Drain Source Voltage- : VDSS= 800V(Min).
Static Drain-Source On-Resistance : RDS(on) = 0.95Ω(Max).
100% avalanche tested.
Minimum Lot-to-Lot variations for robust device performance and reliable operation.

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Published: Nov 16, 2020 |