IXTP12N70X2M - N-Channel MOSFET

Datasheet Summary

Features

High power dissipation.
Static drain-source on-resistance: RDS(on) ≤ 300mΩ@VGS=10V.
100% avalanche tested.
Minimum Lot-to-Lot variations for robust device performance and reliable operation.

INCHANGE

📥 Download Datasheet

Datasheet Details

Part number	IXTP12N70X2M
Manufacturer	INCHANGE
File Size	257.06 KB
Description	N-Channel MOSFET
Datasheet	IXTP12N70X2M Datasheet
Additional preview pages of the IXTP12N70X2M datasheet.

📁 Similar Datasheet

IXTP12N70X2M - Power MOSFET (IXYS)
IXTP12N70X2 - Power MOSFET (IXYS)
IXTP12N50P - Power MOSFET (IXYS)
IXTP12N50PM - Power MOSFET (IXYS)
IXTP12N65X2 - Power MOSFET (IXYS)
IXTP12N65X2M - Power MOSFET (IXYS)
IXTP120N04T2 - Power MOSFET (IXYS)
IXTP120N075T2 - Power MOSFET (IXYS)
IXTP100N04T2 - Power MOSFET (IXYS)
IXTP100N15X4 - Power MOSFET (IXYS)

Other Datasheets by INCHANGE

IXTP12N70X2 - N-Channel MOSFET
IXTP12N50P - N-Channel MOSFET
IXTP12N50PM - N-Channel MOSFET
IXTP12N65X2 - N-Channel MOSFET
IXTP12N65X2M - N-Channel MOSFET
IXTP120N04T2 - N-Channel MOSFET
IXTP120N075T2 - N-Channel MOSFET
IXTP100N04T2 - N-Channel MOSFET

Full PDF Text Transcription

Click to expand full text

isc N-Channel MOSFET Transistor IXTP12N70X2M ·FEATURES ·High power dissipation ·Static drain-source on-resistance: RDS(on) ≤ 300mΩ@VGS=10V ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation ·APPLICATION ·DC/DC Converters ·AC and DC Motor Drives ·Switch-Mode and Resonant-Mode Power Supplies ·ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE VDSS Drain-Source Voltage 700 VGS Gate-Source Voltage ±30 ID Drain Current-Continuous 12 IDM Drain Current-Single Pulsed 24 PD Total Dissipation @TC=25℃ 40 Tj Operating Junction Temperature -55~150 Tstg Storage Temperature -55~150 UNIT V V A A W ℃ ℃ ·THERMAL CHARACTERISTICS SYMBOL PARAMETER Rth(j-c) Junction-to-case thermal resistance MAX 3.

Published: Nov 16, 2020 |