IXTP140N12T2 - N-Channel MOSFET

Features

Static drain-source on-resistance: RDS(on) ≤ 10mΩ@VGS=10V.
Fully characterized avalanche voltage and current.
100% avalanche tested.
Minimum Lot-to-Lot variations for robust device performance and reliable operation.

INCHANGE

Datasheet Details

Part number	IXTP140N12T2
Manufacturer	Inchange Semiconductor
File Size	246.42 KB
Description	N-Channel MOSFET
Datasheet	IXTP140N12T2 Datasheet
Additional preview pages of the IXTP140N12T2 datasheet.

📁 Similar Datasheet

IXTP140N12T2 - Power MOSFET (IXYS)
IXTP140N055T2 - Power MOSFET (IXYS)
IXTP140P05T - Power MOSFET (IXYS)
IXTP14N60P - PolarHV Power MOSFET (IXYS)
IXTP14N60PM - Power MOSFET (IXYS)
IXTP100N04T2 - Power MOSFET (IXYS)
IXTP100N15X4 - Power MOSFET (IXYS)
IXTP102N15T - Power MOSFET (IXYS)
IXTP10N60P - Power MOSFET (IXYS)
IXTP10N60PM - PolarHV Power MOSFET (IXYS Corporation)

Other Datasheets by INCHANGE

IXTP140N055T2 - N-Channel MOSFET
IXTP14N60P - N-Channel MOSFET
IXTP14N60PM - N-Channel MOSFET
IXTP100N04T2 - N-Channel MOSFET
IXTP102N15T - N-Channel MOSFET
IXTP10N60P - N-Channel MOSFET
IXTP10N60PM - N-Channel MOSFET
IXTP110N055P - N-Channel MOSFET

Full PDF Text Transcription

Click to expand full text

isc N-Channel MOSFET Transistor IXTP140N12T2 ·FEATURES ·Static drain-source on-resistance: RDS(on) ≤ 10mΩ@VGS=10V ·Fully characterized avalanche voltage and current ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation ·APPLICATION ·DC/DC Converters ·High Speed Power Switching Applications ·ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE VDSS Drain-Source Voltage 120 VGS Gate-Source Voltage ±20 ID Drain Current-Continuous 140 IDM Drain Current-Single Pulsed 350 PD Total Dissipation @TC=25℃ 577 Tj Operating Junction Temperature -55~175 Tstg Storage Temperature -55~175 UNIT V V A A W ℃ ℃ ·THERMAL CHARACTERISTICS SYMBOL PARAMETER Rth(j-c) Junction-to-case thermal resistance MAX 0.

Published: Nov 19, 2020 |