IXTP170N075T2 - N-Channel MOSFET

Inchange Semiconductor

Key Features

With TO-220 packaging.
High speed switching.
Low gate input resistance.
Standard level gate drive.
Easy to use.
100% avalanche tested.
Minimum Lot-to-Lot variations for robust device performance and reliable operation IXTP170N075T2.

IXTP170N075T2 n-channel mosfet by Inchange Semiconductor - Datasheet Preview

Datasheet Details

Part number	IXTP170N075T2
Manufacturer	Inchange Semiconductor
File Size	255.21 KB
Description	N-Channel MOSFET
Datasheet	IXTP170N075T2 Datasheet

📁 Similar Datasheet

Part Number	Description	Manufacturer
IXTP170N075T2	Power MOSFET	IXYS
IXTP100N04T2	Power MOSFET	IXYS
IXTP100N15X4	Power MOSFET	IXYS
IXTP102N15T	Power MOSFET	IXYS
IXTP10N60P	Power MOSFET	IXYS

Other Datasheets by Inchange Semiconductor

Part Number	Description
IXTP100N04T2	N-Channel MOSFET
IXTP102N15T	N-Channel MOSFET
IXTP10N60P	N-Channel MOSFET
IXTP10N60PM	N-Channel MOSFET
IXTP110N055P	N-Channel MOSFET

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text

isc N-Channel MOSFET Transistor ·FEATURES ·With TO-220 packaging ·High speed switching ·Low gate input resistance ·Standard level gate drive ·Easy to use ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation IXTP170N075T2 ·APPLICATIONS ·Power supply ·Switching applications ·ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE VDSS Drain-Source Voltage 75 VGSS Gate-Source Voltage ±20 ID Drain Current-Continuous 170 IDM Drain Current-Single Pulsed 510 PD Total Dissipation 360 Tj Operating Junction Temperature 175 Tstg Storage Temperature -55~175 UNIT V V A A W ℃ ℃ ·THERMAL CHARACTERISTICS SYMBOL PARAMETER Rth(ch-c) Channel-to-case thermal resistance Rth(ch-a) Channel-to-ambient thermal resistance MAX 0.