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isc N-Channel MOSFET Transistor
IXTP20N65XM
·FEATURES ·High power dissipation ·Static drain-source on-resistance:
RDS(on) ≤ 210mΩ@VGS=10V ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device
performance and reliable operation
·APPLICATION ·DC/DC Converters ·AC and DC Motor Drives ·Switch-Mode and Resonant-Mode Power Supplies
·ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE
VDSS
Drain-Source Voltage
650
VGS
Gate-Source Voltage
±30
ID
Drain Current-Continuous
9
IDM
Drain Current-Single Pulsed
40
PD
Total Dissipation @TC=25℃
63
Tj
Operating Junction Temperature
-55~150
Tstg
Storage Temperature
-55~125
UNIT V V A A W ℃ ℃
·THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
Rth(j-c) Junction-to-case thermal resistance
MAX 2
UNIT ℃/W
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IXTP20N65XM Datasheet
