Datasheet Details
| Part number | IXTP26P10T |
|---|---|
| Manufacturer | Inchange Semiconductor |
| File Size | 236.63 KB |
| Description | P-Channel MOSFET |
| Datasheet | IXTP26P10T-INCHANGE.pdf |
|
|
Overview: isc P-Channel MOSFET Transistor ·.
| Part number | IXTP26P10T |
|---|---|
| Manufacturer | Inchange Semiconductor |
| File Size | 236.63 KB |
| Description | P-Channel MOSFET |
| Datasheet | IXTP26P10T-INCHANGE.pdf |
|
|
|
·High side switching ·Push pull amplifiers ·Current regulators ·ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE VDSS Drain-Source Voltage -100 VGS Gate-Source Voltage ±15 ID Drain Current-Continuous -26 IDM Drain Current-Single Pulsed -80 PD Total Dissipation @TC=25℃ 150 Tj Max.
Operating Junction Temperature 150 Tstg Storage Temperature -55~150 UNIT V V A A W ℃ ℃ ·THERMAL CHARACTERISTICS SYMBOL PARAMETER Rth(j-c) Channel-to-case thermal resistance Rth(j-a) Channel-to-ambient thermal resistance MAX 0.83 62 UNIT ℃/W ℃/W IXTP26P10T isc website：www.iscsemi.cn 1 isc & iscsemi is registered trademark isc P-Channel MOSFET Transistor ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS BVDSS Drain-Source Breakdown Voltage VGS=0V;
ID= -250μA VGS(th) Gate Threshold Voltage VDS=VGS;
Compare IXTP26P10T distributor prices and check real-time stock availability from major suppliers. Prices and inventory may vary by region and order quantity.
| Brand Logo | Part Number | Description | Manufacturer |
|---|---|---|---|
 |
IXTP26P10T | Power MOSFET | IXYS |
| Part Number | Description |
|---|---|
| IXTP200N055T2 | N-Channel MOSFET |
| IXTP200N075T | N-Channel MOSFET |
| IXTP200N085T | N-Channel MOSFET |
| IXTP20N65X | N-Channel MOSFET |
| IXTP20N65XM | N-Channel MOSFET |
| IXTP220N04T2 | N-Channel MOSFET |
| IXTP220N055T | N-Channel MOSFET |
| IXTP220N075T | N-Channel MOSFET |
| IXTP230N04T4 | N-Channel MOSFET |
| IXTP230N075T2 | N-Channel MOSFET |