IXTP26P10T - P-Channel MOSFET

Product Overview

INCHANGE

Datasheet Details

Part number	IXTP26P10T
Manufacturer	INCHANGE
File Size	236.63 KB
Description	P-Channel MOSFET
Datasheet	IXTP26P10T Datasheet
Additional preview pages of the IXTP26P10T datasheet.

Product details

Description

High side switching Push pull amplifiers Current regulators ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE VDSS Drain-Source Voltage -100 VGS Gate-Source Voltage ±15 ID Drain Current-Continuous -26 IDM Drain Current-Single Pulsed -80 PD Total Dissipation @TC=25℃ 150 Tj Max.Operating Junction Temperature 150 Tstg Storage Temperature -55~150 UNIT V V A A W ℃ ℃ THERMAL CHARACTERISTICS SYMBOL PARAMETER Rth(j-c) Channel-to-case thermal

Features

Static drain-source on-resistance: RDS(on)≤90mΩ.
Enhancement mode:.
100% avalanche tested.
Minimum Lot-to-Lot variations for robust device performance and reliable operation.

📁 Similar Datasheet

IXTP26P10T - Power MOSFET (IXYS)
IXTP26P20P - Power MOSFET (IXYS)
IXTP200N055T2 - Power MOSFET (IXYS)
IXTP200N075T - Power MOSFET (IXYS)
IXTP200N085T - Power MOSFET (IXYS)
IXTP20N65X - Power MOSFET (IXYS)
IXTP20N65XM - Power MOSFET (IXYS)
IXTP220N04T2 - Power MOSFET (IXYS)

Other Datasheets by INCHANGE

IXTP200N055T2 - N-Channel MOSFET
IXTP200N075T - N-Channel MOSFET
IXTP200N085T - N-Channel MOSFET
IXTP20N65X - N-Channel MOSFET
IXTP20N65XM - N-Channel MOSFET
IXTP220N04T2 - N-Channel MOSFET

Published: Oct 13, 2020 |