IXTP2N60P Datasheet | Inchange Semiconductor

FEATURES - Static drain-source on-resistance: RDS(on) ≤ 5.1Ω@VGS=10V - Fully characterized avalanche voltage and current - 100% avalanche tested - Minimum Lot-to-Lot variations for robust device performance and reliable operation - APPLICATION - DC/DC Converter - Ideal for high-frequency switching and synchronous rectification - ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE VDSS Drain-Source Voltage Gate-Source Voltage ±30 Drain Current-Continuous Drain Current-Single Pulsed Total Dissipation @TC=25℃ Tj Operating Junction Temperature -55~150 Tstg Storage Temperature -55~150 UNIT V V A A W ℃ ℃ - THERMAL CHARACTERISTICS SYMBOL PARAMETER Rth(j-c) Junction-to-case thermal resistance MAX 2.27 UNIT ℃/W isc website：.iscsemi.cn 1 isc & iscsemi is registered trademark isc N-Channel MOSFET...