IXTP32P05T - P-Channel MOSFET

Datasheet Summary

Features

Static drain-source on-resistance: RDS(on)≤39mΩ.
100% avalanche tested.
Minimum Lot-to-Lot variations for robust device performance and reliable operation.

INCHANGE

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Datasheet Details

Part number	IXTP32P05T
Manufacturer	INCHANGE
File Size	246.20 KB
Description	P-Channel MOSFET
Datasheet	IXTP32P05T Datasheet
Additional preview pages of the IXTP32P05T datasheet.

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Full PDF Text Transcription

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isc P-Channel MOSFET Transistor IXTP32P05T ·FEATURES ·Static drain-source on-resistance: RDS(on)≤39mΩ ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation ·APPLICATION ·Hight side switching ·Current regulators ·Automatic test equipment ·ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE VDSS Drain-Source Voltage -50 VGS Gate-Source Voltage ±15 ID Drain Current-Continuous -32 IDM Drain Current-Single Pulsed -110 PD Total Dissipation @TC=25℃ 83 Tj Operating Junction Temperature -55~150 Tstg Storage Temperature -55~150 UNIT V V A A W ℃ ℃ ·THERMAL CHARACTERISTICS SYMBOL PARAMETER Rth(j-c) Channel-to-case thermal resistance MAX 1.5 UNIT ℃/W isc website：www.iscsemi.

Published: Nov 19, 2020 |