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IXTP3N60P - N-Channel MOSFET

Datasheet Summary

Features

  • Static drain-source on-resistance: RDS(on) ≤ 2.9Ω@VGS=10V.
  • Fully characterized avalanche voltage and current.
  • 100% avalanche tested.
  • Minimum Lot-to-Lot variations for robust device performance and reliable operation.

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Datasheet Details

Part number IXTP3N60P
Manufacturer INCHANGE
File Size 246.83 KB
Description N-Channel MOSFET
Datasheet download datasheet IXTP3N60P Datasheet
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isc N-Channel MOSFET Transistor IXTP3N60P ·FEATURES ·Static drain-source on-resistance: RDS(on) ≤ 2.9Ω@VGS=10V ·Fully characterized avalanche voltage and current ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation ·APPLICATION ·DC/DC Converter ·Ideal for high-frequency switching and synchronous rectification ·ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE VDSS Drain-Source Voltage 600 VGS Gate-Source Voltage ±30 ID Drain Current-Continuous 3 IDM Drain Current-Single Pulsed 6 PD Total Dissipation @TC=25℃ 70 Tj Operating Junction Temperature -55~150 Tstg Storage Temperature -55~150 UNIT V V A A W ℃ ℃ ·THERMAL CHARACTERISTICS SYMBOL PARAMETER Rth(j-c) Junction-to-case thermal resistance MAX 1.
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