IXTP52P10P - P-Channel MOSFET

Datasheet Summary

Features

Static drain-source on-resistance: RDS(on)≤50mΩ.
100% avalanche tested.
Minimum Lot-to-Lot variations for robust device performance and reliable operation.

INCHANGE

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Datasheet Details

Part number	IXTP52P10P
Manufacturer	INCHANGE
File Size	245.25 KB
Description	P-Channel MOSFET
Datasheet	IXTP52P10P Datasheet
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isc P-Channel MOSFET Transistor IXTP52P10P ·FEATURES ·Static drain-source on-resistance: RDS(on)≤50mΩ ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation ·APPLICATION ·Hight side switching ·Current regulators ·Automatic test equipment ·ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE VDSS Drain-Source Voltage -100 VGS Gate-Source Voltage ±20 ID Drain Current-Continuous -52 IDM Drain Current-Single Pulsed -130 PD Total Dissipation @TC=25℃ 300 Tj Operating Junction Temperature -55~150 Tstg Storage Temperature -55~150 UNIT V V A A W ℃ ℃ ·THERMAL CHARACTERISTICS SYMBOL PARAMETER Rth(j-c) Channel-to-case thermal resistance MAX 0.42 UNIT ℃/W isc website：www.iscsemi.

Published: Nov 19, 2020 |