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IXTQ18N60P - N-Channel MOSFET

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Overview

isc N-Channel MOSFET Transistor ·.

Key Features

  • Drain Source Voltage- : VDSS= 600V(Min).
  • Static Drain-Source On-Resistance : RDS(on) = 420mΩ(Max).
  • Fast Switching.
  • 100% avalanche tested.
  • Minimum Lot-to-Lot variations for robust device performance and reliable operation.

📁 Similar Datasheet

Brand Logo Part Number Description Manufacturer
IXYS Logo IXTQ18N60P Power MOSFET IXYS

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